# CHEGG SEMICONDUCTOR PHYSICS AND DEVICES

The dc charge distributions of 4 appropriate MOS capacitors are displayed in Figure P10.1. For each case: (a) Is the semiconductor n or p type? (b) Is the device biased in the accumulation, depletion, or inversion mode? (c) Draw the energy- band diagram in the semiconductor area.

Figure P10.1 I Figure for Problem 10.1.

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(a)

Refer Figure P10.1 (a) in the message book

Figure P10.1 (a) indicates the distribution of charges of ideal MOS capacitor.

Observe Figure P10.1 (a), the metal (M) layer consists of holes at the interconfront area.

Hence, the MOS capacitor is P type.

Also as the silicon area is composed of ionized acceptors, thus, the area is invariation.

Hence, the MOS capacitor in Figure P10.1 (a) is P-kind in invariation area.

Draw the power band diagram of the P- type inversion area.

Figure 1, reflects the power band also diagram of the P-kind inversion area.

Figure 1

Thus, the MOS capacitor in Figure P10.1 (a) is P-kind in invariation area, and also the power band diagram is attracted in Figure (1).

(b)

Refer Figure P10.1 (b) in the text book

Figure P10.1 (b) suggests the circulation of charges of appropriate MOS capacitor.

Observe Figure P10.1 (b), the steel (M) layer is composed of holes at the interchallenge area.

Hence, the MOS capacitor is P kind.

Also as the silsymbol region does not have actually any kind of ionized acceptors, hence, the area is depletion.

Hence, the MOS capacitor in Figure P10.1 (b) is P-form in depletion area.

Draw the energy band diagram of the P- kind depletion area.

Figure 1, shows the power band also diagram of the P-type inversion region.

Figure 2

Because of this, the MOS capacitor in Figure P10.1 (b) is P-kind in depletion region, and the power band also diagram is attracted in Figure (2).

(c)

Refer Figure P10.1 (c) in the message book

Figure P10.1(c) shows the distribution of charges of ideal MOS capacitor.

Observe Figure P10.1 (c) the steel (M) layer is composed of electrons at the interface region, and also silicon (S) layer consist of equal variety of electron.

Hence, the MOS capacitor is P-form in accumulation region.

Hence, the MOS capacitor in Figure P10.1 (c) is P-form in accumulation area.

Draw the energy band also diagram of the P- type build-up region.

Figure 3, shows the power band also diagram of the P- form buildup area area.

Figure 3

Therefore, the MOS capacitor in Figure P10.1 (c) is P-form in build-up region, and the power band diagram is attracted in Figure (3).

(d)

Refer Figure P10.1 (d) in the text book

Figure P10.1(d) suggests the distribution of charges of ideal MOS capacitor.

Observe Figure P10.1 (d), the metal (M) layer is composed of electrons at the interconfront area.

Hence, the MOS capacitor is N kind.

Also as the silsymbol area is composed of ionized acceptors, and also holes thus, the area is solid invariation region.

Hence, the MOS capacitor in Figure P10.1 (d) is N-type in solid inversion area.

Draw the power band diagram of the N- type strong invariation area.

Figure 1, reflects the energy band diagram of the N-type strong inversion area.

Figure 4

As such, the MOS capacitor in Figure P10.1 (d) is N-type in strong inversion area, and also the energy band diagram is attracted in Figure (4).